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Simultaneous Read/Write
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Simultaneous Read/Write Flash Memory Devices - Features and Benefits
Features Benefits
Simultaneous Read/Write Flash Architecture Displaces EEPROM or SRAM memory, reducing component cost, board space, board cost, power consumption, weight, and inventory costs
Memory Bank Size Options (16 and 32Mb only) Allows customers to optimize memory allocation
Data Management Software (DMS) Facilitates EEPROM emulation, speeding design, integration, and time to market
SecSi (Secured Silicon) Sector (16 and 32Mb only) Offers additional 64K of memory space which can be factory protected to protect against unauthorized cloning
FBGA Chip Scale Packaging Minimizes board space requirements
Fast Factory Programming Improves throughput when using standard programming equipment
Enhanced Sector Protect Disables writing to or erasing any sector; implemented using standard programming equipment
Provides virus-proof protection for the system code
Temporary Sector Unprotect Allows in-system changes to code within protected sectors
Advanced Power Management Increases battery life by reducing energy consumption
Zero Power Operation Increases battery life by automatically putting the device in sleep mode during inactive periods
Same Pinout and Instruction Set as Am29LVxxx Family Simplifies upgrades from the LV-family to increase memory density or functionality
Minimum 1,000,000 Program/Erase Cycles and 20 Year Data Retention Reliable operation for the life of the system



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