The Am29PDL129H is a 128 Mbit, 3.0 volt-only Page Mode and Simultaneous Read/Write Flash memory device organized as 8 Mwords. The word-wide data (x16) appears on DQ15-DQ0. This device can be programmed in-system or in standard EPROM programmers. A 12.0 V VPP is not required for write or erase operations.

The device offers fast page access time of 25 and 30 ns, with corresponding random access times of 65 and 85 ns, respectively, allowing high speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable (CE#f1, CE#f2), write enable (WE#) and output enable (OE#) controls. Dual Chip Enables allow access to two 64 Mbit partitions of the 128 Mbit memory space.

• Consists of Am29PDL127H/Am29PDL129H, 32 Mb pSRAM and two Am29LV640M.
• Power supply voltage of 2.7 to 3.3 volt
• High performance (XIP)
  • Access time as fast as 65 ns initial / 25 ns page
• High performance (Data Storage)
  • Access time as fast as 110 ns initial / 30 ns page
• Package
  • 93-Ball FBGA
• Operating Temperature
  • –40°C to +85°C

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Flash Memory Features (XIP)

• 128 Mbit Page Mode device
  • Page size of 8 words: Fast page read access from random locations within the page
• Dual Chip Enable inputs (PDL129 only)
  • Two CE# inputs control selection of each half of the memory space
• Single power supply operation
  • Full Voltage range: 2.7 to 3.3 volt read, erase, and program operations for battery-powered applications
• Simultaneous Read/Write Operation
  • Data can be continuously read from one bank while executing erase/program functions in another bank
  • Zero latency switching from write to read operations
• FlexBank Architecture
  • 4 separate banks, with up to two simultaneous operations per device
    • PDL127:
      • Bank A: 16 Mbit (4 Kw x 8 and 32 Kw x 31)
      • Bank B: 48 Mbit (32 Kw x 96)
      • Bank C: 48 Mbit (32 Kw x 96)
      • Bank D: 16 Mbit (4 Kw x 8 and 32 Kw x 31)
    • PDL129:
      • Bank 1A: 48 Mbit (32 Kw x 96)
      • Bank 1B: 16 Mbit (4 Kw x 8 and 32 Kw x 31)
      • Bank 2A: 16 Mbit (4 Kw x 8 and 32 Kw x 31)
      • Bank 2B: 48 Mbit (32 Kw x 96)
• SecSiTM (Secured Silicon) Sector region
  • Up to 128 words accessible through a command sequence
  • Up to 64 factory-locked words
  • Up to 64 customer-lockable words
• Both top and bottom boot blocks in one device
• Manufactured on 0.13 µm process technology
• 20-year data retention at 125°C
• Minimum 1 million erase cycle guarantee per sector

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• High Performance
  • Page access times as fast as 25 ns
  • Random access times as fast as 65 ns
• Power consumption (typical values at 10 MHz)
  • 45 mA active read current
  • 25 mA program/erase current
  • 1 µA typical standby mode current

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• Software command-set compatible with JEDEC 42.4 standard
  • Backward compatible with Am29F and Am29LV families
• CFI (Common Flash Interface) complaint
  • Provides device-specific information to the system, allowing host software to easily reconfigure for different Flash devices
• Erase Suspend/Erase Resume
  • Suspends an erase operation to allow read or program operations in other sectors of same bank
• Unlock Bypass Program command
  • Reduces overall programming time when issuing multiple program command sequences

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Hardware Features

• Ready/Busy# pin (RY/BY#)
  • Provides a hardware method of detecting program or erase cycle completion
• Hardware reset pin (RESET#)
  • Hardware method to reset the device to reading array data
• WP#/ACC (Write Protect/Acceleration) input
  • At VIL, hardware level protection for the first and last two 4K word sectors.
  • At VIH, allows removal of sector protection
  • At VHH, provides accelerated programming in a factory setting

• Single power supply operation
  • 3 V for read, erase, and program operations
• VersatileI/O™ control
  • Device generates data output voltages and tolerates data input voltages on the DQ inputs/outputs as determined by the voltage on the VIO pin; operates from 1.65 to 3.6 V
• Manufactured on 0.23 µm MirrorBit process technology
• SecSi™ (Secured Silicon) Sector region
  • 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence
  • May be programmed and locked at the factory or by the customer
• Flexible sector architecture
  • One hundred twenty-eight 32 Kword sectors
• Compatibility with JEDEC standards
  • Provides pinout and software compatibility for single-power supply flash, and superior inadvertent write protection
• Minimum 100,000 erase cycle guarantee per sector
• 20-year data retention at 125°C

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• High performance
  • 110 ns access time
  • 30 ns page read times
  • 0.5 s typical sector erase time
  • 22 µs typical effective write buffer word programming time: 16-word write buffer reduces overall programming time for multiple-word updates
  • 4-word page read buffer
  • 16-word write buffer
• Low power consumption (typical values at 3.0 V, 5 MHz)
  • 30 mA typical active read current
  • 50 mA typical erase/program current
  • 1 µA typical standby mode current

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• Software features
  • Program Suspend & Resume: read other sectors before programming operation is completed
  • Erase Suspend & Resume: read/program other sectors before an erase operation is completed
  • Data# polling & toggle bits provide status
  • Unlock Bypass Program command reduces overall multiple-word programming time
  • CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices
• Hardware features
  • Sector Group Protection: hardware-level method of preventing write operations within a sector group
  • Temporary Sector Unprotect: VID-level method of changing code in locked sectors
  • WP#/ACC input:
    Write Protect input (WP#) protects first or last sector regardless of sector protection settings ACC (high voltage) accelerates programming time for higher throughput during system production
  • Hardware reset input (RESET#) resets device
  • Ready/Busy# output (RY/BY#) indicates program or erase cycle completion

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pSRAM Features

• Power dissipation
  • Operating: 40 mA maximum
  • Standby: 70 µA maximum
  • Deep power-down standby: 5 µA
• CE1s# and CE2ps Chip Select
• Power down features using CE1s# and CE2ps
• Data retention supply voltage: 2.7 to 3.3 volt
• Byte data control: LB#s (DQ7–DQ0), UB#s (DQ15–DQ8)
• 8-word page mode access