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Am50DL9608G Product Overview
Stacked Multi-Chip Package (MCP) Flash
Memory and SRAM 64 Megabit (4 M x 16-Bit) and 32 Megabit (2 M x 16-Bit) CMOS
3.0 Volt-only, Simultaneous Operation Flash Memories, and 8 Mbit (512 K x 16-Bit)
Pseudo Static RAM
General Description
The Am50DL9608G consists of two flash memory devices (one 64-Mbit Am29DL640G and
one 32-Mbit Am29DL320G), and one 8 Mbit pseudo SRAM device.
Distinctive Characteristics
MCP Features
- Power supply voltage of 2.7 to 3.3 volt
- High performance
- Access time as fast as 70 ns
- Package
- Operating Temperature
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Flash Memory Features
(Am29DL640G/Am29DL320G)
- Features apply to Am29DL640G and Am29DL320G independently.
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Architectural Advantages
- Simultaneous Read/Write operations
- Data can be continuously read from one bank while executing erase/program
functions in another bank. Zero latency between read and write operations
- Flexible Bank architecture
- Read may occur in any of the three banks not being written or erased.
Four banks may be grouped by customer to achieve desired bank divisions.
- Manufactured on 0.17 µm process technology
- SecSi™ (Secured Silicon) Sector
- Extra 256 byte sector on Am29DL640G
- Extra 256 byte sector on Am29DL320G
- Factory locked and identifiable: 16 bytes available for secure,
random factory Electronic Serial Number; verifiable as factory locked
through autoselect function. ExpressFlash option allows entire sector
to be available for factory-secured data
- Customer lockable: Sector is one-time programmable. Once
sector is locked, data cannot be changed.
- Zero Power Operation
- Sophisticated power management circuits reduce power consumed during
inactive periods to nearly zero.
- Boot sectors
- Top and bottom boot sectors in Am29DL640G
- Top or bottom boot options in Am29DL320G
- Compatible with JEDEC standards
- Pinout and software compatible with single-power-supply flash standard
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Performance Characteristics
- High performance
- Access time as fast as 70 ns
- Program time: 4 µs/word typical utilizing Accelerate function
- Ultra low power consumption (typical values)
- 2 mA active read current at 1 MHz
- 10 mA active read current at 5 MHz
- 200 nA in standby or automatic sleep mode
- Minimum 1 million write cycles guaranteed per sector
- 20 year data retention at 125°C
- Reliable operation for the life of the system
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Software Features
- Supports Common Flash Memory Interface (CFI)
- Program/Erase Suspend/Erase Resume
- Suspends program/erase operations to allow programming/erasing in
same bank
- Data# Polling and Toggle Bits
- Provides a software method of detecting the status of program or
erase cycles
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Hardware Features
- Any combination of sectors can be erased
- Ready/Busy# output (RY/BY#)
- Hardware method for detecting program or erase cycle completion
- Hardware reset pin (RESET#)
- Hardware method of resetting the internal state machine to the read
mode
- WP#/ACC input pin
- Write protect (WP#) protects sectors 0, 1, 140, and 141 in Am29DL640G,
and two outermost boot sectors in Am29DL320G
- Acceleration (ACC) function accelerates program timing
- Sector protection
- Hardware method of locking a sector, either in-system or using programming
equipment, to prevent any program or erase operation within that sector
- Temporary Sector Unprotect allows changing data in protected sectors
in-system
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pSRAM Features
- Power dissipation
- Operating: 30 mA maximum
- Standby: 70 µA maximum
- CE1s# and CE2s Chip Select
- Power down features using CE1s# and CE2s
- Data retention supply voltage: 2.7 to 3.3 volt
- Byte data control: LB#s (DQ7-DQ0), UB#s (DQ15-DQ8)
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