 |
|
|
|
|
Am29PDL128G Product Overview
128 Megabit (8 M x 16-Bit/4 M x 32-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory with VersatileIO™ Control
General Description
The Am29PDL128G is a 128 Mbit, 3.0 volt-only Page Mode and Simultaneous Read/Write Flash memory device organized as 8 Mwords or 4 M double words (One word is equal to two bytes). The device offers fast page access times of 25 and 30 ns, with corresponding random access times of 70 and 80 ns. The device is available in an 80-ball Fortified BGA package.
Distinctive Characteristics
| Architectural Advantages |
Package Options |
Performance Characteristics |
Software Features |
Hardware Features |
|
Architectural Advantages
- 128Mbit Page Mode device
- Word (16-bit) or double word (32-bit) mode selectable via WORD# input
- Page size of 8 words/4 double words: Fast page read access from random locations within the page
- Single power supply operation
- Full Voltage range: 2.7 to 3.6 volt read, erase, and program operations for battery-powered applications
- Simultaneous Read/Write operations
- Data can be continuously read from one bank while executing erase/program functions in another bank
- Zero latency switching from write to read operations
- FlexBank Architecture
- 4 separate banks, with up to two simultaneous operations per device
- Organized as two 16 Mbit banks (Bank 1 & 4) and two 48 Mbit banks (Bank 2 & 3)
- VersatileI/O™ (VIO) Control
- Output voltage generated and input voltages tolerated on the device is determined by the voltage on the VIO pin
- SecSi (Secured Silicon) Sector region
- 128 words (64 double words) accessible through a command sequence
- Both top and bottom boot blocks in one device
- Manufactured on 0.17 µm process technology
- 20-year data retention at 125°C
- Minimum 1 million write cycle guarantee per sector
Return to Top
Package Options
Return to Top
Performance Characteristics
- High performance
- Page access times as fast as 25 ns
- Random access times as fast as 70 ns
- Power consumption (typical values at 10 MHz)
- 40 mA active read current
- 17 mA program/erase current
- 1.5 µA typical standby mode current
Return to Top
Software Features
- Software command-set compatible with JEDEC 42.4 standard
- Backward compatible with Am29F and Am29LV families
- CFI (Common Flash Interface) complaint
- Provides device-specific information to the system, allowing host software to easily reconfigure for different Flash devices
- Erase Suspend/Resume
- Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation
- Unlock Bypass Program command
- Reduces overall programming time when issuing multiple program command sequences
Return to Top
Hardware Features
- Ready/Busy# pin (RY/BY#)
- Provides a hardware method of detecting program or erase cycle completion
- Hardware reset pin (RESET#)
- Hardware method to reset the device to reading array data
- WP# (Write Protect) input
- At VIL, protects the first and last two 8K word sectors, regardless of sector protect/unprotect status
- At VIH, allows removal of sector protection
- An internal pull up to VCC is provided
- Persistent Sector Protection
- A command sector protection method to lock combinations of individual sectors and sector groups to prevent program or erase operations within that sector
- Sectors can be locked and unlocked in-system at VCC level
- Password Sector Protection
- A sophisticated sector protection method to lock combinations of individual sectors and sector groups to prevent program or erase operations within that sector using a user-defined 64-bit password
- ACC (Acceleration) input provides faster programming times in a factory setting
Return to Top
|
|
|
|
|
|
