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Advanced Flash Memory Devices - Features and Benefits
Features Benefits
1.8 Volt-only for Read, Program and Erase Helps lower overall system cost and power consumption by eliminating 5.0 Volt and 3.0 Volt power supplies
Extended Operating Range Facilitates battery selection by providing operation over an unregulated 1.7 - 1.9 Volt range. Meets commercial and industrial temperature range requirements
Read Mode Power Consumpiton as low as27mW (typical) Zero Power Operation consumes 0.2uA (typical) Extends system usage time between battery charges
Choice of Architectures Simplifies design by offering world-wide databus, and standard and Simultaneous Read/Write, Burst, or Page Mode operation
Initial Read Access Times as fast as 40ns (PDS) and asynchronous 90ns (BDS) Helps improve system performance
Minimum 1,000,000 Program/Erase Cycles 20 Year Data Retention at 125oC Reliable operation over time
Accelerated (factory) Programming Mode Can decrease programming time (by up to 50 percent)
SecSi™ (Secure Silicon) Sector Protection (PDS only) Provides system security by permanently locking (one time only) an ID number into a special sector (prevents product cloning)
Handshaking feature (BD643 only) Allows the host system to simply monitor RDY signal from the device to optimize read of theinitial word of burst data



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