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Am29LV640M Product Overview
MirrorBit™ 3.0 Volt-only Uniform or Boot Sector Flash Memory
64 Megabit (4 M x 16-Bit or 4 M x 16-Bit/8 M x 8-Bit),
MirrorBit™ 3.0 Volt-only Uniform or Boot Sector Flash Memory with VersatileI/0™ Control
NOTE: For new designs, S29GL064M supercedes Am29LV640M and is the factory-recommended migration path for this device. Please refer to the S29GL064M Family Datasheet for specifications and ordering information.
General Description
The Am29LV640M is a 64 Mbit, 3.0 Volt single power supply Flash memory device. An access time of 90, 100, 110, or 120 ns is available. Note that each device has a specific operating voltage range (VCC) and an I/O voltage range (VIO), as specified in the Product Selector Guide and the Ordering Information sections. The device is offered in a 56-pin TSOP or 63-ball Fine-Pitch BGA package, or 64-ball Fortified BGA package.
Distinctive Characteristics
Architectural Advantages
- Single power supply operation
- 3 V for read, erase, and program operations
- VersatileI/0™ control
- Device generates data output voltages and tolerates data input voltages as determined by the voltage on the VIO pin; operates from 1.65 to 3.6 V
- Manufactured on 0.23 µm MirrorBit process technology
- SecSi™ (Secured Silicon) Sector region
- 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence
- May be programmed and locked at the factory or by the customer
- Flexible sector architecture
- One hundred twenty-eight 32 Kword/64-Kbyte sectors (Am29LV640MH/L/U only)
- One hundred twenty-seven 32 Kword/64-Kbyte sectors and
Eight 4 Kword/8 Kbyte boot sectors (Am29LV640MT/B only)
- Compatibility with JEDEC standards
- Provides pinout and software compatibility for single-power supply Flash, and superior inadvertent write protection
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Package Options
- 56-pin TSOP
- 63-ball Fine-Pitch BGA (LV640MU only)
- 64-ball Fortified BGA (LV640MH/L only)
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Performance Characteristics
- High performance
- 90 ns access time
- 25 ns page read times
- 0.4 s typical sector erase time
- 5.9 µs typical write buffer word programming time: 16-word/32-byte write buffer reduces overall programming time for multiple-word/byte updates
- 4-word/8-byte page read buffer
- 16-word/32-byte write buffer
- Low power consumption (typical values at 3.0 V, 5 MHz)
- 30 mA typical active read current
- 50 mA typical erase/program current
- 1 µA typical standby mode current
- Minimum 100,000 erase cycle guarantee per sector
- 20-year data retention at 125°C
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Software Features
- Program Suspend & Resume: read other sectors before programming operation is completed
- Erase Suspend & Resume: read/program other sectors before an erase operation is completed
- Data# polling & toggle bits provide status
- Unlock Bypass Program command reduces overall multiple-word programming time
- CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple Flash devices
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Hardware Features
- Sector Group Protection: hardware-level method of preventing write operations within a sector group
- Temporary Sector Unprotect: V ID -level method of changing code in locked sectors
- ACC (high voltage) input accelerates programming time for higher throughput during system production
- Hardware reset input (RESET#) resets device
- Ready/Busy# output (RY/BY#) indicates program or erase cycle completion
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