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MirrorBit™
Am29LV128M
Datasheet (for new designs, S29GL128M)
Datasheet (for new designs, S29GL128N)
Datasheet (for existing designs)

Am29LV128M Product Overview
128 Megabit (8 M x 16-Bit/16 M x 8-Bit) MirrorBit™ 3.0 Volt-only,
Uniform Sector Flash Memory with VersatileI/0™ Control


NOTE: For new designs, S29GL128M or S29GL128N supercedes Am29LV128M and is the factory-recommended migration path for this device. Please refer to the S29GL128M or S29GL128N Family Datasheet for specifications and ordering information.


General Description
The Am29LV128M is a 128 Mbit, 3.0 volt single power supply flash memory devices organized as 8,388,608 words or 16,777,216 bytes. The device has a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The device can be programmed either in the host system or in standard EPROM programmers.


Distinctive Characteristics
Architectural Advantages Performance Characteristics Software Features Hardware Features


Architectural Advantages
  • Single power supply operation
    • 3 volt read, erase, and program operations
  • VersatileI/O™ control
    • Device generates and tolerates voltages on CE# and DQ I/O as determined by the voltage on the VIO pin; operates from 1.65 to 3.6 V
  • Manufactured on 0.23 µm MirrorBit process technology
  • SecSi™ (Secured Silicon) Sector region
    • 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence
    • May be programmed and locked at the factory or by the customer
  • Flexible sector architecture
    • Two hundred fifty-six 32 Kword (64 Kbyte) sectors
  • Compatibility with JEDEC standards
    • Provides pinout and software compatibility for single-power supply Flash, and superior inadvertent write protection
  • Minimum 100,000 erase cycle guarantee per sector
  • 20-year data retention at 125°C
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Performance Characteristics

  • High performance
    • 90 ns access time
    • 25 ns page read times
    • 0.4 s typical sector erase time
    • 5.9 µs typical write buffer word programming time: 16-word/32-byte write buffer reduces overall programming time for multiple-word updates
    • 4-word/8-byte page read buffer
    • 16-word/32-byte write buffer
  • Low power consumption (typical values at 3.0 V, 5 MHz
    • 30 mA typical active read current
    • 50 mA typical erase/program current
    • 1 µA typical standby mode current
  • Package Options
    • 56-pin TSOP
    • 64-ball Fortified BGA
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Software Features
  • Program Suspend & Resume: read other sectors before programming operation is completed
  • Erase Suspend & Resume: read/program other sectors before an erase operation is completed
  • Data# polling & toggle bits provide status
  • Unlock Bypass Program command reduces overall multiple-word or byte programming time
  • CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices
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Hardware Features
  • Sector Group Protection: hardware-level method of preventing write operations within a sector group
  • Temporary Sector Unprotect: VID -level method of changing code in locked sectors
  • WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings
  • Hardware reset input (RESET#) resets device
  • Ready/Busy# output (RY/BY#) detects program or erase cycle completion
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