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Am29LV320MH/L Product Overview
Am29LV320MH/L 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit™ 3.0 Volt-only
Uniform Sector Flash Memory with VersatileI/O™ Control
NOTE: For new designs, S29GL032M supercedes Am29LV032MH/L and is the factory-recommended migration path for this device. Please refer to the S29GL032M Family Datasheet for specifications and ordering information.
General Description
The Am29LV320MH/L is a 32 Mbit, 3.0 volt single power supply flash memory
device. The device has an 8-bit/16-bit bus and can be programmed either
in the host system or in standard EPROM programmers. An access time of 90,
100, 110, or 120 ns is available. Each access time has a specific operating
voltage range (VCC) and an I/O voltage range (VIO). The device is offered
in a 56-pin TSOP or 64-ball Fortified BGA package.
Distinctive Characteristics
Architectural Advantages
- Single power supply operation
- 3 V for read, erase, and program operations
- VersatileI/O™ control
- Device generates data output voltages and tolerates data input
voltages on the DQ inputs/outputs as determined by the voltage on
the VIO pin; operates from 1.65 to 3.6 V
- Manufactured on 0.23 µm MirrorBit process technology
- SecSi™ (Secured Silicon) Sector region
- 128-word/256-byte sector for permanent, secure identification
through an 8-word/16-byte random Electronic Serial Number, accessible
through a command sequence
- May be programmed and locked at the factory or by the customer
- Flexible sector architecture
- Sixty-four 32 Kword/64-Kbyte sectors
- Compatibility with JEDEC standards
- Provides pinout and software compatibility for single-power supply
flash, and superior inadvertent write protection
- Minimum 100,000 erase cycle guarantee per sector
- 20-year data retention at 125°C
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Package Options
- 56-pin TSOP
- 64-ball Fortified BGA
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Performance Characteristics
- High performance
- 90 ns access time
- 25 ns page read times
- 0.4 s typical sector erase time
- 5.9 µs typical write buffer word programming time: 16-word/32-byte
write buffer reduces overall programming time for multiple-word/byte
updates
- 4-word/8-byte page read buffer
- 16-word/32-byte write buffer
- Low power consumption (typical values at 3.0 V, 5 MHz)
- 30 mA typical initial page read current; 10 mA typical intra-Page read current
- 50 mA typical erase/program
current
- 1 µA typical standby mode current
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Software Features
- Program Suspend & Resume: read other sectors before programming operation
is completed
- Erase Suspend & Resume: read/program other sectors before an erase
operation is completed
- Data# polling & toggle bits provide status
- Unlock Bypass Program command reduces overall multiple-word programming
time
- CFI (Common Flash Interface) compliant: allows host system to identify
and accommodate multiple flash devices
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Hardware Features
- Sector Group Protection: hardware-level method of preventing write
operations within a sector group
- Temporary Sector Unprotect: VID-level method of changing code in locked
sectors
- WP#/ACC input:
- Write Protect input (WP#) protects first or last sector regardless
of sector protection settings
- ACC (high voltage) accelerates programming time for higher throughput
during system production
- Hardware reset input (RESET#) resets device
- Ready/Busy# output (RY/BY#) indicates program or erase cycle completion
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