16 Megabit (1 M x 16-bit/512 K x 32-Bit),
CMOS 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory

General Description
The Am29BDD160 is a 16 Megabit, 2.5 Volt-only single power supply burst mode flash memory device. The device can be configured for either 1,048,576 words in 16-bit mode or 524,288 double words in 32-bit mode. The device can also be programmed in standard EPROM programmers. The device offers a configurable burst interface to 16/32-bit microprocessors and microcontrollers.

Distinctive Characteristics

Architectural Advantages

• Simultaneous Read/Write operations
• Data can be continuously read from one bank while executing erase/program functions in other bank
• Zero latency between read and write operations
• Two bank architecture: 75%/25%
• User-Defined x16 or x32 Data Bus
• Dual Boot Block
  • Top and bottom boot in the same device
• Flexible sector architecture
  • Eight 8 Kbytes, thirty 64 Kbytes, and eight 8 Kbytes sectors
• Manufactured on 0.17 µm process technology
• SecSi (Secured Silicon) Sector (256 Bytes)
  • Factory locked and identifiable: 16 bytes for secure, random factory Electronic Serial Number; remainder may be customer data programmed by AMD
  • Customer lockable: Can be read, programmed or erased just like other sectors. Once locked, data cannot be changed
• Programmable Burst interface
  • Interface to any high performance processor
  • Modes of Burst Read Operation:
    • Linear Burst: 4 double words (x32), 8 words (x16) and double words (x32), and 32 words (x16) with wrap around
    • Interleaved Burst: 2, 4, and 8 doubleword (x32) interleaved burst with wrap around
    • Continuous Linear burst: x16 and x32 data bus
• Single power supply operation
  • Optimized for 2.3 to 2.75 volt read, erase, and program operations
• Compatibility with JEDEC standards (JC42.4)
  • Software compatible with single-power supply Flash
  • Backward-compatible with AMD Am29LV and Am29F flash memories

Performance Characteristics

• High performance read access
  • Initial/random access times as fast as 54 ns
  • Burst access time as fast as 8 ns
• Ultra low power consumption
  • Burst Mode Read: 90 mA @ 66 MHz max
  • Program/Erase: 50 mA max
  • Standby mode: CMOS: 9 µA max
• Minimum 1 million write cycles guaranteed per sector
• 20 year data retention at 125°C
• VersatileI/O™ control
  • Device generates data output voltages and tolerates data input voltages as determined by the voltage on the VIO pin
  • 1.65 V to 2.75 V compatible I/O signals

Software Features

• Persistent Sector Protection
  • A command sector protection method to lock combinations of individual sectors and sector groups to prevent program or erase operations within that sector (requires only VCC levels)
• Password Sector Protection
  • A sophisticated sector protection method to lock combinations of individual sectors and sector groups to prevent program or erase operations within that sector using a user-definable 64-bit password
• Supports Common Flash Interface (CFI)
• Unlock Bypass Program Command
  • Reduces overall programming time when issuing multiple program command sequences
• Data# Polling and toggle bits
  • Provides a software method of detecting program or erase operation completion

Hardware Features

• Program Suspend/Resume & Erase Suspend/Resume
  • Suspends program or erase operations to allow reading, programming, or erasing in same bank
• Hardware Reset (RESET#), Ready/Busy# (RY/BY#), and Write Protect (WP#) inputs
• ACC input
  • Accelerates programming time for higher throughput during system production

Package Options

• 80-pin PQFP
• 80-ball Fortified BGA