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1.8V Devices
Am29DS family (Simult. R/W)
Am29DS320G (32Mb, x8/x16)
datasheet

Am29DS320G Product Overview

32 Megabit (4 M x 8-Bit/2 M x 16-Bit)
CMOS 1.8 Volt-only, Simultaneous Operation Flash Memory

General Description
The Am29DS320G is a 32 megabit, 1.8 volt-only flash memory device, organized as 2,097,152 words of 16 bits each or 4,194,304 bytes of 8 bits each. Word mode data appears on DQ15-DQ0; byte mode data appears on DQ7-DQ0. The device is designed to be programmed in-system with the standard 1.8 volt VCC supply, and can also be programmed in standard EPROM programmers.

Distinctive Characteristics

Architectural Advantages Performance Characteristics Software Features Hardware Features

Architectural Advantages

  • Simultaneous Read/Write operations
    • Data can be continuously read from one bank while executing erase/program functions in another bank
    • Zero latency between read and write operations
  • Flexible Bank™ architecture
    • Read may occur in any of the three banks not being written or erased.
    • Four banks may be grouped by customer to achieve desired bank divisions.
  • 256-byte SecSi™ (Secured Silicon) Sector
    • Factory locked and identifiable: 16 bytes available for secure, random factory Electronic Serial Number; verifiable as factory locked through autoselect function. ExpressFlash option allows entire sector to be available for factory-secured data
    • Customer lockable: One time programmable. Once locked, data cannot be changed.
  • Zero Power Operation
    • Sophisticated power management circuits reduce power consumed during inactive periods to nearly zero
  • Package options
    • 48-ball FBGA
    • 48-pin TSOP
  • Top or bottom boot blocks
  • Manufactured on 0.17 µm process technology
  • Compatible with JEDEC standards
    • Pinout and software compatible with single-power-supply flash standard
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Performance Characteristics
  • High performance
    • Access time as fast 70 ns
    • Program time: 4 µs/word typical utilizing Accelerate function
  • Ultra low power consumption (typical values)
    • 2 mA active read current at 1 MHz
    • 10 mA active read current at 5 MHz
    • 200 nA in standby or automatic sleep mode
  • Minimum 1 million write cycles guaranteed per sector
  • 20 year data retention at 125°C
    • Reliable operation for the life of the system
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Software Features
  • Data Management Software (DMS)
    • AMD-supplied software manages data programming, enabling EEPROM emulation
    • Eases historical sector erase flash limitations
  • Supports Common Flash Memory Interface (CFI)
  • Erase Suspend/Erase Resume
    • Suspends erase operations to allow reading from other sectors in the same bank
  • Data# Polling and Toggle Bits
    • Provides a software method of detecting the status of program or erase cycles
  • Unlock Bypass Program command
    • Reduces overall programming time when issuing multiple program command sequences
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Hardware Features

  • Any combination of sectors can be erased
  • Ready/Busy# output (RY/BY#)
    • Hardware method for detecting program or erase cycle completion
  • Hardware reset pin (RESET#)
    • Hardware method of resetting the internal state machine to the read mode
  • WP#/ACC input pin
    • Write protect (WP#) function allows protection of two outermost boot sectors, regardless of sector protect status
    • Acceleration (ACC) function accelerates program timing
  • Sector protection
    • Hardware method of locking a sector, either in-system or using programming equipment, to prevent any program or erase operation within that sector
    • Temporary Sector Unprotect allows changing data in protected sectors in-system
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