64 Megabit (8 M x 8-Bit),
CMOS 3.0 Volt-only Flash Memory with UltraNAND™ Technology

General Description
The Am30LV0064D is a 64 Mbit mass storage Flash Memory device. The device is suited to high-density applications in which data is sequential and requires frequent, fast write capability. The UltraNAND™ block and page architecture is capable of accommodating applications requiring IDE disk drive-compatible blocks.

Distinctive Characteristics

Architectural Advantages

• Single power supply operation
• Full voltage range: 2.7 to 3.6 Volt read, erase, and program operations
• Separate V_CCQ for 5 Volt I/O tolerance
• Automated Program and Erase
• Page program: 512 + 16 bytes
• Block erase: 8 K + 256 bytes
• Block architecture
• 8 Kbyte blocks + 256 byte spare area (separately erasable, readable, and programmable)
• 512 byte page + 16 byte spare area for ECC and other system overhead information
• 100% good blocks over product lifetime

• Industry Standard NAND compatible pinout with 8-bit I/O bus and control signals
• TSOP-II 44/40 pin package (standard and reverse) with copper lead frame for higher reliability
• 40-ball FBGA package provides higher reliability and “packing density”

Performance Characteristics

• Fast read and program performance (typical values)
• Read: < 7 µs initial, < 50 ns sequential
• Program: 200 µs (full page program at 400 ns/byte)
• Erase: < 2 ms/8 Kbyte block
• Operating current (typical)
• Read: 10 mA (sequential)
• Program: 10 mA
• Erase: 10 mA
• Standby: 10 µA (CMOS)
• Minimum 10,000 program/erase cycles guaranteed per block, without ECC (> 1 million cycles with ECC)
• 10-year data retention at 85°C
• Industrial temperature range, –40°C to +85°C

Software Features

• Command set
• Basic Command set: Read Data, Read ID, Read Status, Input Data, Program Data, Block Erase, Reset
• Superset Commands: Gapless Sequential Read Data, Erase Suspend/Resume
• Operation status byte
• Provides a software method of detecting program or erase operation completion, program/erase pass/fail condition, erase suspend status, and the write protect status
• Block erase suspend/resume
• Suspends an erase operation to read data from, or program data to, a block that is not being erased, then resumes the erase operation

Hardware Features

• Ready/Busy# pin (RY/BY#)
• Provides a hardware method of detecting program or erase cycle completion
• WP# input pin
• At VIL, the device is protected. Program or erase operations in the device are inhibited
• At VIH, the device is unprotected. Program and erase operations are allowed