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Density Families
32 Mbit
S29NSxxxJ
Datasheet

S29NS128J, S29NS064J, S29NS032J and S29NS016J

General Description

The S29NS128J, S29NS064J, S29NS032J and S29NS016J are 128 Mbit, 64 Mbit, 32 Mbit and 16 Mbit. 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash memory devices, organized as 8,388,608, 4,194,304, 2,097,152 and 1,048,576. words of 16 bits each. These devices use a single V CC of 1.7 to 1.95 V to read, program, and erase the memory array. A 12.0-volt V PP may be used for faster program performance if desired. These de­vices can also be programmed in standard EPROM programmers.

Distinctive Characteristics

Architectural Advantages

  • Single 1.8 volt read, program and erase (1.70 to 1.95 volt)
  • Multiplexed Data and Address for reduced I/O count
    • A15–A0 multiplexed as DQ15–DQ0
    • Addresses are latched by AVD# control input when CE# lo
  • Manufactured on 110 process technology
  • Simultaneous Read/Write operation
    • Data can be continuously read from one bank while executing erase/program functions in another bank
    • Zero latency between read and write operations 
  • Programable Burst Interface
    • Linear Burst: 32, 16, and 8 words with wrap around
    • Linear Burst: 32, 16, and 8 words without wrap around
    • Continuous Sequential Burst
  • Sector Architecture
  • Four 8 Kword sectors
  • Two hundred fifty-five (S29NS128J), one hundred twenty-seven (S29NS064J),sixty-three (S29NS032J), or thirty-one (S29NS016J) 32 Kword sectors
  • 1,000,000 cycles per sector typical
  • Data Retention: 20-year typical
  • Packages
  • 48-ball Very Thin FBGA (S29NS128J)
  • 44-ball Very Thin FBGA (S29NS064J, S29NS032J, S29NS016J

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Performance Characteristics

  • Read access times at 66/54 MHz (CL=30 pF)
    • Burst access times of 11/13.5 ns at industrial temperature range
    • Asynchronous random access times of 65/70 ns
    • Synchronous random access times of 71/87.5 n
  • Typical Programming
    • Single word programming time of 9 µs
    • Sector erase time of 200 ms for 8 Kword sectors and 400 ms sector erase time for 32 Kword sectors
  • Power dissipation (typical values, 8 bits switching, CL = 30 pF)
    • Burst Mode Read: 25 Ma
    • Simultaneous Operation: 40 mA
    • Program/Erase: 15 mA—Standby mode: 9 µA

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Hardware Features

  • Software command sector locking
  • Write protect (WP#) function allows protection of two highest boot sectors,
  • Handshaking feature available
    • Provides host system with minimum possible latency by monitoring RDY
  • Hardware reset input (RESET#)
    • Hardware method to reset the device for reading array data
  • CMOS compatible inputs, CMOS compatible outputs

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Software Features

  • Supports Common Flash Memory Interface (CFI)
  • Software command set compatible with JEDEC 42.4 standard
  • Data# Polling and toggle bits
    • Provides a software method of detecting program and erase operation completion
  • Erase Suspend/Resume
    • Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation
  • Program Suspend/Resume
    • Suspends a programming operation to read data from a sector other than the one being programmed, then resume the programming operation
  • Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors
  • Embedded Program algorithm automatically writes and verifies data at specified addresses

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Additional Features

  • Program Operation
    • Ability to perform synchronous and asynchronous program operation independent of burst control register setting

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