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S29NS128J, S29NS064J, S29NS032J and S29NS016J
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General Description
The S29NS128J, S29NS064J, S29NS032J and S29NS016J are 128 Mbit, 64 Mbit, 32 Mbit and 16 Mbit. 1.8 Volt-only, Simultaneous Read/Write, Burst Mode Flash memory devices, organized as 8,388,608, 4,194,304, 2,097,152 and 1,048,576. words of 16 bits each. These devices use a single V CC of 1.7 to 1.95 V to read, program, and erase the memory array. A 12.0-volt V PP may be used for faster program performance if desired. These devices can also be programmed in standard EPROM programmers.
Distinctive Characteristics
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| Architectural Advantages
- Single 1.8 volt read, program and erase (1.70 to 1.95 volt)
- Multiplexed Data and Address for reduced I/O count
- A15–A0 multiplexed as DQ15–DQ0
- Addresses are latched by AVD# control input when CE# lo
- Manufactured on 110 process technology
- Simultaneous Read/Write operation
- Data can be continuously read from one bank while executing erase/program functions in another bank
- Zero latency between read and write operations
- Programable Burst Interface
- Linear Burst: 32, 16, and 8 words with wrap around
- Linear Burst: 32, 16, and 8 words without wrap around
- Continuous Sequential Burst
- Sector Architecture
- Four 8 Kword sectors
- Two hundred fifty-five (S29NS128J), one hundred twenty-seven (S29NS064J),sixty-three (S29NS032J), or thirty-one (S29NS016J) 32 Kword sectors
- 1,000,000 cycles per sector typical
- Data Retention: 20-year typical
- Packages
- 48-ball Very Thin FBGA (S29NS128J)
- 44-ball Very Thin FBGA (S29NS064J, S29NS032J, S29NS016J
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Performance Characteristics
- Read access times at 66/54 MHz (CL=30 pF)
- Burst access times of 11/13.5 ns at industrial temperature range
- Asynchronous random access times of 65/70 ns
- Synchronous random access times of 71/87.5 n
- Typical Programming
- Single word programming time of 9 µs
- Sector erase time of 200 ms for 8 Kword sectors and 400 ms sector erase time for 32 Kword sectors
- Power dissipation (typical values, 8 bits switching, CL = 30 pF)
- Burst Mode Read: 25 Ma
- Simultaneous Operation: 40 mA
- Program/Erase: 15 mA—Standby mode: 9 µA
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Hardware Features
- Software command sector locking
- Write protect (WP#) function allows protection of two highest boot sectors,
- Handshaking feature available
- Provides host system with minimum possible latency by monitoring RDY
- Hardware reset input (RESET#)
- Hardware method to reset the device for reading array data
- CMOS compatible inputs, CMOS compatible outputs
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Software Features
- Supports Common Flash Memory Interface (CFI)
- Software command set compatible with JEDEC 42.4 standard
- Data# Polling and toggle bits
- Provides a software method of detecting program and erase operation completion
- Erase Suspend/Resume
- Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation
- Program Suspend/Resume
- Suspends a programming operation to read data from a sector other than the one being programmed, then resume the programming operation
- Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors
- Embedded Program algorithm automatically writes and verifies data at specified addresses
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Additional Features
- Program Operation
- Ability to perform synchronous and asynchronous program operation independent of burst control register setting
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