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Am29LV033MU Product Overview
Am29LV033MU 32 Megabit (4 M x 8-Bit) MirrorBit™ 3.0 Volt-only Uniform Sector
Flash Memory with VersatileI/O™ Control Distinctive Characteristics
NOTE: For new designs, S29GL032M supercedes Am29LV033MU and is the factory-recommended migration path for this device. Please refer to the S29GL032M Family Datasheet for specifications and ordering information.
General Description
The Am29LV033MU is a 32 Mbit, 3.0 volt single power supply flash memory.
The device has an 8-bit wide data bus, and can be programmed either in the
host system or in standard EPROM programmers. The device is available with
an access time of 90, 100, 110, or 120 ns. Note that each device has a specific
operating voltage range (VCC) and an I/O voltage range (VIO). The device
is offered in a 48-pin TSOP or 48-ball FBGA package.
Distinctive Characteristics
Architectural Advantages
- Single power supply operation
- 3 volt read, erase, and program operations
- VersatileI/O™ control
- Device generates and tolerates data voltages on CE# and DQ inputs/outputs
as determined by the voltage on the V10 pin; operates from 1.65
to 3.6 V
- Manufactured on 0.23 µm MirrorBit Process Technology
- SecSi™ (Secured Silicon) Sector region
- 256-byte sector for permanent, secure identification through an
16-byte random Electronic Serial Number, accessible through a command
sequence
- May be programmed and locked at the factory or by the customer
- Flexible sector architecture
- Sixty-four 64 Kbyte sectors
- Compatibility with JEDEC standards
- Provides pinout and software compatibility for single-power supply
flash, and superior inadvertent write protection
- Minimum 100,000 erase cycle guarantee per sector
- 20-year data retention at 125°C
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Package Options
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Performance Characteristics
- High performance
- 90 ns access time
- 25 ns page read times
- 0.4 s typical sector erase time
- 3.0 µs typical write buffer byte programming time: 32-byte write
buffer reduces overall programming time for multiple-byte updates
- 8-byte read page buffer
- 32-byte write buffer
- Low power consumption (typical values at 3.0 V, 5 MHz)
- 30 mA typical initial Page read current; 10 mA typical intra-Page
read current
- 50 mA typical erase/program current
- 1 µA typical standby mode current
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Software Features
- Program Suspend & Resume: read other sectors before programming operation
is completed
- Erase Suspend & Resume: read/program other sectors before an erase
operation is completed
- Data# polling & toggle bits provide status
- Unlock Bypass Program command reduces overall multiple-byte programming
time
- CFI (Common Flash Interface) compliant: allows host system to identify
and accommodate multiple flash devices
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Hardware Features
- Sector Group Protection: hardware method of preventing write operations
within a sector group
- Temporary Sector Unprotect: VID-level method of changing code in locked
sectors
- ACC (high voltage) pin accelerates programming time for higher throughput
during system production
- Hardware reset pin (RESET#) resets device
- Ready/Busy# pin (RY/BY#) detects program or erase cycle completion
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