Two SpansionTM S29JL064H, 64 Megabit (8 M x 8-Bit/4 M x 16-Bit)
CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memories

General Description
The S29JL064H is a 64 megabit, 3.0 volt-only flash memory device, organized as 4,194,304 words of 16 bits each or 8,388,608 bytes of 8 bits each. Word mode Data appears on DQ15–DQ0; byte mode data appears on DQ7–DQ0. The device is designed to be programmed in-system with the standard 3.0 volt V CC supply, and can also be programmed in standard EPROM programmers.

Standard control pins — chip enable (CE#), write enable (WE#), and output en­able (OE#) — control normal read and write operations, and avoid bus contention issues.

The device requires only a single 3.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the pro­gram and erase operations.

Distinctive Characteristics

Architectural Advantages

• Simultaneous Read/Write operations
• Data can be continuously read from one bank while executing erase/program functions in another bank
• Zero latency between read and write operations
• Flexible Bank architecture
  • Read may occur in any of the three banks not being written or erased
  • Four banks may be grouped by customer to achieve desired bank divisions
• Boot Sectors
  • Top and bottom boot sectors in the same device
  • Any combination of sectors can be erased
• Manufactured on 130 nm process technology
• SecSi™ (Secured Silicon) Sector: Extra 256 Byte sector
• Factory locked and identifiable: 16 bytes available for secure, random factory Electronic Serial Number; verifiable as factory locked through autoselect function
• Customer lockable: One-time programmable only. Once locked, data cannot be changed
• Zero Power Operation
• Sophisticated power management circuits reduce power consumed during inactive periods to nearly zero
• Compatible with JEDEC standards
• Pinout and software compatible with single-power-supply flash standard

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Package Options

• 73-Ball FBGA

Performance Characteristics

• High performance
• Access time as fast as 70 ns
• Program time: 4 µs/word typical using accelerated programming function
• Ultra low power consumption (typical values)
• 2 mA active read current at 1 MHz
• 10 mA active read current at 5 MHz
• 200 nA in standby or automatic sleep mode
• Cycling Endurance: 1 million cycles per sector typical
• Data Retention: 20 years typical

Software Features

• Supports Common Flash Memory Interface (CFI)
• Erase Suspend/Erase Resume
• Suspends erase operations to read data from, or program data to, a sector that is not being erased, then resumes the erase operation
• Data# Polling and Toggle Bits
• Provides a software method of detecting the status of program or erase cycles
• Unlock Bypass Program command
• Reduces overall programming time when issuing multiple program command sequences

Hardware Features

• Ready/Busy# output (RY/BY#)
• Hardware method for detecting program or erase cycle completion
• Hardware reset pin (RESET#)
• Hardware method of resetting the internal state machine to the read mode
• WP#/ACC input pin
• Write protect (WP#) function protects sectors 0, 1, 140, and 141, regardless of sector protect status
• Acceleration (ACC) function accelerates program timing
• Sector protection
• Hardware method to prevent any program or erase operation within a sector
• Temporary Sector Unprotect allows changing data in protected sectors in-system