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Density Families
64 Mbit
S29JL064H
Datasheet
Product Overview

S29JL064H Product Overview
64 Megabit (8 M x 8 Bit/4 M x 16 Bit) CMOS 3.0 Volt only, Simultaneous Read/Write Flash Memory


General Description
The S29JL064H is a 64 megabit, 3.0 volt-only flash memory device, organized as 4,194,304 words of 16 bits each or 8,388,608 bytes of 8 bits each. Word mode data appears on DQ15–DQ0; byte mode data appears on DQ7–DQ0. The device is designed to be programmed in-system with the standard 3.0 volt VCC supply, and can also be programmed in standard EPROM programmers.


Distinctive Characteristics

Architectural Advantages Performance Characteristics Software Features Hardware Features


Architectural Advantages

  • Simultaneous Read/Write operations
    • Data can be continuously read from one bank while executing erase/program functions in another bank.
    • Zero latency between read and write operations
  • Flexible Bank architecture
    • Read may occur in any of the three banks not being written or erased.
    • Four banks may be grouped by customer to achieve desired bank divisions.
  • Boot Sectors
    • Top and bottom boot sectors in the same device
    • Any combination of sectors can be erased
  • Manufactured on 0.13 µm process technology
  • SecSi™ (Secured Silicon) Sector: Extra 256 Byte sector
    • Factory locked and identifiable: 16 bytes available for secure, random factory Electronic Serial Number; verifiable as factory locked through autoselect function.
    • Customer lockable: One-time programmable only. Once locked, data cannot be changed
  • Zero Power Operation
    • Sophisticated power management circuits reduce power consumed during inactive periods to nearly zero.
  • Compatible with JEDEC standards
    • Pinout and software compatible with single-power-supply flash standard
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Performance Characteristics

  • High performance
    • Access time as fast as 55 ns
    • Program time: 4 µs/word typical using accelerated programming function
  • Ultra low power consumption (typical values)
    • 2 mA active read current at 1 MHz
    • 10 mA active read current at 5 MHz
    • 200 nA in standby or automatic sleep mode
  • Cycling Endurance: 1 million cycles per sector typical
  • Data Retention: 20 years typical

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Software Features
  • Supports Common Flash Memory Interface (CFI)
  • Erase Suspend/Erase Resume
    • Suspends erase operations to read data from, or program data to, a sector that is not being erased, then resumes the erase operation.
  • Data# Polling and Toggle Bits
    • Provides a software method of detecting the status of program or erase cycles
  • Unlock Bypass Program command
    • Reduces overall programming time when issuing multiple program command sequences


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Hardware Features
  • Ready/Busy# output (RY/BY#)
    • Hardware method for detecting program or erase cycle completion
  • Hardware reset pin (RESET#)
    • Hardware method of resetting the internal state machine to the read mode
  • WP#/ACC input pin
    • Write protect (WP#) function protects sectors 0, 1, 140, and 141, regardless of sector protect status
    • Acceleration (ACC) function accelerates program timing
  • Sector protection
    • Hardware method to prevent any program or erase operation within a sector
    • Temporary Sector Unprotect allows changing data in protected sectors in-system
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