32 Megabit (2 M x 16-Bit),
CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory

General Description
The Am29BDS320G is a 32 Mbit, 1.8 Volt-only, simultaneous Read/Write, Burst Mode Flash memory device, organized as 2,097,152 words of 16 bits each. This device uses a single VCC of 1.65 to 1.95 V to read, program, and erase the memory array. The device supports Enhanced VIO to offer up to 3V compatible inputs and outputs. A 12.0-volt VID may be used for faster program performance if desired. The device can also be programmed in standard EPROM programmers.

Distinctive Characteristics

Architectural Advantages

• Single 1.8 volt read, program and erase (1.65 to 1.95
  volt)
• Manufactured on 0.17 µm process technology
• Enhanced VersatileIO™ (VIO) Feature
  • Device generates data output voltages and tolerates
    data input voltages as determined by the voltage on
    the VIO pin
  • 1.8V and 3V compatible I/O signals
• Simultaneous Read/Write operation
  • Data can be continuously read from one bank while
    executing erase/program functions in other bank
  • Zero latency between read and write operations
  • Four bank architecture: 8Mb/8Mb/8Mb/8Mb
• Programmable Burst Interface
  • 2 Modes of Burst Read Operation
  • Linear Burst: 8, 16, and 32 words with wrap-around
  • Continuous Sequential Burst
• Sector Architecture
  • Eight 8 Kword sectors and sixty-two 32 Kword
    sectors
  • Banks A and D each contain four 8 Kword sectors
    and fifteen 32 Kword sectors; Banks B and C each
    contain sixteen 32 Kword sectors
  • Eight 8 Kword boot sectors, four at the top of the
    address range, and four at the bottom of the address
    range
• Minimum 1 million erase cycle guarantee per sector
• 20-year data retention at 125°C
  • Reliable operation for the life of the system
• 64-ball FBGA package

Performance Characteristics

• Read access times at 54/40 MHz (at 30 pF)
  • Burst access times of 13.5/20 ns
  • Asynchronous random access times of 70 ns
  • Initial Synchronous access times as fast as 87.5/95 ns
• Power dissipation (typical values, CL = 30 pF)
  • Burst Mode Read: 10 mA
  • Simultaneous Operation: 25 mA
  • Program/Erase: 15 mA
  • Standby mode: 0.2 µA

Software Features

• Supports Common Flash Memory Interface (CFI)
• Software command set compatible with JEDEC 42.4
  standards
  • Backwards compatible with Am29F and Am29LV
    families
• Data# Polling and toggle bits
  • Provides a software method of detecting program
    and erase operation completion
• Erase Suspend/Resume
  • Suspends an erase operation to read data from, or
    program data to, a sector that is not being erased,
    then resumes the erase operation
• Unlock Bypass Program command
  • Reduces overall programming time when issuing
    multiple program command sequences

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Hardware Features

• Sector Protection
  • Software command sector locking
• Reduced Wait-State Handshaking feature available
  • Provides host system with minimum possible latency
    by monitoring RDY
• Hardware reset input (RESET#)
  • Hardware method to reset the device for reading array
    data
• WP# input
  • Write protect (WP#) function protects sectors 0 and 1
    (bottom boot), or sectors 68 and 69 (top boot),
    regardless of sector protect status
• ACC input: Acceleration function reduces
  programming time; all sectors locked when ACC = VIL
• CMOS compatible inputs, CMOS compatible outputs
• Low VCC write inhibit

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