NOTE: For new designs, S29AL016M supercedes Am29LV160M and is the factory-recommended migration path for this device. Please refer to the S29AL016M Family Datasheet for specifications and ordering information.

GENERAL DESCRIPTION
The Am29LV160M is a 16 Mbit, 3.0 Volt-only Flash memory organized as 2,097,152 bytes or 1,048,576 words. The device is offered in 48-ball FBGA, 44-pin SO, and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15-DQ0; the byte-wide (x8) data appears on DQ7-DQ0. This device is designed to be programmed in-system with the standard system 3.0 volt VCC supply. A 12.0 V VPP or 5.0 VCC are not required for write or erase operations. The device can also be programmed in standard EPROM programmers.

DISTINCTIVE CHARACTERISTICS

• Single power supply operation
  • Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications
  • Regulated voltage range: 3.0 to 3.6 volt read and write operations and for compatibility with high performance 3.3 volt microprocessors
• Manufactured on 0.23 µm MirrorBitTM process technology
  • Fully compatible with Am29LV160D device High performance Full voltage range: Access times as fast as 70 ns
  • Regulated voltage range: access times as fast as XX ns
• Ultra low power consumption (typical values at 5 MHz)
  • 400 nA Automatic Sleep mode current
  • 400 nA standby mode current
  • 15 mA read current
  • 40 mA program/erase current
• Flexible sector architecture
  • One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and thirty-one 64 Kbyte sectors (byte mode)
  • One 8 Kword, two 4 Kword, one 16 Kword, and thirty-one 32 Kword sectors (word mode)
  • Supports full chip erase
  • Sector Protection features:
    • A hardware method of locking a sector to prevent any program or erase operations within that sector
    • Sectors can be locked in-system or via programming equipment
  • Temporary Sector Unprotect feature allows code changes in previously locked sectors
• Unlock Bypass Program Command
  • Reduces overall programming time when issuing multiple program command sequences
• Top or bottom boot block configurations available
• Embedded Algorithms
  • Embedded Erase algorithm automatically preprograms and erases the entire chip or any combination of designated sectors
  • Embedded Program algorithm automatically writes and verifies data at specified addresses
• Minimum 1,000,000 write cycle guarantee per sector
• 20-year data retention at 125°C
  • Reliable operation for the life of the system
• Package option
  • 48-ball FBGA
  • 48-pin TSOP
  • 44-pin SO
  • 64-ball Fortified BGA
• CFI (Common Flash Interface) compliant
  • Provides device-specific information to the system, allowing host software to easily reconfigure for different Flash devices
• Compatibility with JEDEC standards
  • Pinout and software compatible with single-power supply Flash
  • Superior inadvertent write protection
• Data# Polling and toggle bits
  • Provides a software method of detecting program or erase operation completion
• Ready/Busy# pin (RY/BY#)
  • Provides a hardware method of detecting program or erase cycle completion (not available on 44-pin SO)
• Erase Suspend/Erase Resume
  • Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation
• Hardware reset pin (RESET#)
  • Hardware method to reset the device to reading array data
• Command sequence optimized for mass storage
  
  • Specific address not required for unlock cycles