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Standard
Am29LV family (3V)
LV400B (4Mb, x8/x16)
Datasheet
Datasheet (KGD)
Datasheet (KGW)

Am29LV400B Product Overview

4 Megabit (512 K x 8-Bit/256 K x 16-Bit)
CMOS 3.0 Volt-only Boot Sector Flash Memory

General Description
The Am29LV400B is a 4 Mbit, 3.0 Volt-only Flash Memory. This device is designed to be programmed in-system using only a single 3.0 Volt VCC supply. No VPP is required for write or erase operations. The device can also be programmed in standard EPROM programmers. The device is offered in 48-ball FBGA, 44-pin SO, 48-pin TSOP packages, and Known Good Die (KGD) packaging.

Distinctive Characteristics

Architectural Advantages Package Options Performance Characteristics Software Features Hardware Features


Architectural Advantages

  • Single power supply operation
    • Full voltage range: 2.7 to 3.6 Volt read and write operations for battery-powered applications
    • Regulated voltage range: 3.0 to 3.6 Volt read and write operations for compatibility with high performance 3.3 Volt microprocessors
  • Manufactured on 0.32 µm process technology
    • Compatible with 0.5 µm Am29LV400 device
  • Flexible sector architecture
    • One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and seven 64 Kbyte sectors (byte mode)
    • One 8 Kword, two 4 Kword, one 16 Kword, and seven 32 Kword sectors (word mode)
    • Supports full chip erase
    • Sector Protection features:
      A hardware method of locking a sector to prevent any program or erase operations within that sector
      Sectors can be locked in-system or via programming equipment
      Temporary Sector Unprotect feature allows code changes in previously locked sectors
  • Top or bottom boot block configurations available
  • Compatible with JEDEC standards
    • Pinout and software compatible with single power supply Flash
    • Superior inadvertent write protection
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Package Options
  • 48-ball FBGA
  • 48-pin TSOP
  • 44-pin SO
  • Known Good Die (KGD)
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Performance Characteristics

  • High performance
    • Full voltage range: access times as fast as 70 ns
    • Regulated voltage range: access times as fast as 55 ns
  • Ultra low power consumption (typical values at 5 MHz)
    • 200 nA Automatic Sleep mode current
    • 200 nA standby mode current
    • 7 mA read current
    • 15 mA program/erase current
  • Minimum 1,000,000 write cycle guarantee per sector
  • 20-year data retention at 125°C
    • Reliable operation for the life of the system
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Software Features

  • Unlock Bypass Mode Program Command
    • Reduces overall programming time when issuing multiple program command sequences
  • Data# Polling and toggle bits
    • Provides a software method of detecting program or erase operation completion
  • Erase Suspend/Erase Resume
    • Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation
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Hardware Features

  • Ready/Busy# pin (RY/BY#)
    • Provides a hardware method of detecting program or erase cycle completion
  • Hardware reset pin (RESET#)
    • Hardware method to reset the device to reading array data
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