MCP Features

• Power supply voltage of 2.7 to 3.1 volt
• High performance
• Access time as fast as 70 ns initial/ 25 ns subsequent
• Package
• 73-Ball FBGA
• Operating Temperature
• –25°C to +85°C

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Pseudo SRAM Features

• Power dissipation
• Operating: 30 mA maximum
• Standby: 100 µA maximum
• Deep power-down current: 10µA
• CE1s# and CE2s Chip Select
• Power down features using CE1s# and CE2s
• Data retention supply voltage: 2.7 to 3.1 volt
• Byte data control: LB#s (DQ7-DQ0), UB#s (DQ15-DQ8)

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Flash Memory Features
Architectural Advantages

• Simultaneous Read/Write operations
• Data can be continuously read from one bank while executing erase/program functions in another bank.
• Zero latency between read and write operations
• Flexible Bank™ architecture
• Four banks may be grouped by customer to achieve desired bank divisions.
  • Bank A: 8 Mbit (4 Kw x 8 and 32Kw x 15)
  • Bank B: 24 Mbit (32 Kw x 48)
  • Bank C: 24 Mbit (32 Kw x 48)
  • Bank D: 8 Mbit (4 Kw x 8 and 32 Kw x 15)
    
• Manufactured on 0.17 µm process technology
• SecSi™ (Secured Silicon) Sector: Extra 256 Byte sector
• Factory locked and identifiable: 16 bytes available for
  secure, random factory Electronic Serial Number; verifiable
  as factory locked through autoselect function. ExpressFlash
  option allows entire sector to be available for
  factory-secured data
• Customer lockable: Sector is one-time programmable. Once sector is locked, data cannot be changed.
• Zero Power Operation
• Sophisticated power management circuits reduce power consumed during inactive periods to nearly zero.
• Boot Sectors
  • Top and bottom boot sectors in the same device
• Compatible with JEDEC standards
• Pinout and software compatible with single-power-supply flash standard

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Performance Characteristics

• High performance
• Access time as fast as 70 ns
• Program time: 4 µs/word typical utilizing Accelerate function
• Ultra low power consumption (typical values)
• 23 mA active read current
• 15 mA program/erase current
• 200 nA in standby or automatic sleep mode
• Minimum 1 million write cycles guaranteed per sector
• 20 year data retention at 125°C
• Reliable operation for the life of the system

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Software Features

• Software command-set compatible with JEDEC 42.4 standard
• Backward compatible with Am29F and Am29LV families
• CFI (Common Flash Interface) complaint
• Erase Suspend/Erase Resume
  • Suspends an erase operation to allow read or program operations in other sectors of same bank
• Unlock Bypass Program command
  • Reduces overall programming time when issuing multiple program command sequences

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Hardware Features

• Any combination of sectors can be erased
• Ready/Busy# output (RY/BY#)
  • Hardware method for detecting program or erase cycle completion
• Hardware reset pin (RESET#)
  • Hardware method of resetting the internal state machine to the read mode
• WP#/ACC input pin
  • Write protect (WP#) function protects sectors 0, 1, 140, and 141, regardless of sector protect status
  • Acceleration (ACC) function accelerates program timing
• Persistent Sector protection
• A command sector protection method to lock combinations of individual sectors and sector groups to prevent program or erase operations within that sector
• Sectors can be locked and unlocked in-system at VCC level
• Password Sector Protection
  • A sophisticated sector protection method to lock
    combinations of individual sectors and sector groups to
    prevent program or erase operations within that sector using
    a user-defined 64-bit password

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