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Am41DL6408H Product Overview
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous
Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM
General Description
Am29DL640H Features
The Am29DL640H is a 64 megabit, 3.0 volt-only flash
memory device, organized as 4,194,304 words of 16
bits each or 8,388,608 bytes of 8 bits each. Word
mode data appears on DQ15–DQ0; byte mode data
appears on DQ7–DQ0. The device is designed to be
programmed in-system with the standard 3.0 volt VCC
supply, and can also be programmed in standard
EPROM programmers.
The device is available with an access time of 70 or 85
ns and is offered in a 73-ball FBGA package. Standard
control pins—chip enable (CE#f), write enable (WE#),
and output enable (OE#)—control normal read and
write operations, and avoid bus contention issues.
The device requires only a single 3.0 volt power supply
for both read and write functions. Internally generated
and regulated voltages are provided for the
program and erase operations.
Distinctive Characteristics
| MCP Features |
Architectural Advantages |
Performance Characteristics |
Software Features |
Hardware Features |
SRAM Features |
|
MCP Features
- Power supply voltage of 2.7 to 3.3 volt
- High performance
- Access time as fast as 70 ns Flash/55 ns SRAM
- Package
- Operating Temperature
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Architectural Advantages
- Simultaneous Read/Write operations
- Data can be continuously read from one bank while executing erase/program functions in another bank
- Zero latency between read and write operations
- Flexible Bank™ architecture
- Read may occur in any of the three banks not being written or erased
- Four banks may be grouped by customer to achieve desired bank divisions
- Manufactured on 0.13µm process technology
- SecSi™ (Secured Silicon) Sector: Extra 256 Byte sector
- Factory locked and identifiable: 16 bytes available for secure, random factory Electronic Serial Number; verifiable as factory locked through autoselect function. ExpressFlash option allows entire sector to be available for factory-secured data
- Customer lockable: Sector is one-time programmable. Once sector is locked, data cannot be changed.
- Zero Power Operation
- Sophisticated power management circuits reduce power consumed during inactive periods to nearly zero
- Boot sectors
- Top and bottom boot sectors in the same device
- Compatible with JEDEC standards
- Pinout and software compatible with single-power-supply flash standard
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Performance Characteristics
- High performance
- Access time as fast as 70 ns
- Program time: 4 µs/word typical utilizing Accelerate function
- Ultra low power consumption (typical values)
- 2 mA active read current at 1 MHz
- 10 mA active read current at 5 MHz
- 200 nA in standby or automatic sleep mode
- Minimum 1 million write cycles guaranteed per sector
- 20 Year data retention at 125°C
- Reliable operation for the life of the system
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Software Features
- Data Management Software(DMS)
- AMD-supplied software manages data programming and erasing, enabling EEPROM emulation
- Eases sector erase limitations
- Supports Common Flash Memory Interface (CFI)
- Program/Erase Suspend/Erase Resume
- Suspends program/erase operations to allow programming/erasing in same bank
- Data# Polling and Toggle Bits
- Provides a software method of detecting the status of program or erase cycles
- Unlock Bypass Program command
- Reduces overall programming time when issuing multiple program command sequences
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Hardware Features
- Any combination of sectors can be erased
- Ready/Busy# output (RY/BY#)
- Hardware method for detecting program or erase cycle completion
- Hardware reset pin (RESET#)
- Hardware method of resetting the internal state machine to the read mode
- WP#/ACC input pin
- Write protect (WP#) function protects sectors 0, 1, 140, and 141, regardless of sector protect status
- Acceleration (ACC) function accelerates program timing
- Sector protection
- Hardware method of locking a sector, either in-system or using programming equipment, to prevent any program or erase operation within that sector
- Temporary Sector Unprotect allows changing data in protected sectors in-system
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SRAM Features
- Power dissipation
- Operating: 30 mA maximum
- Standby: 15µA maximum
- CE1s# and CE2s Chip Select
- Power down features using CE1s# and CE2s
- Data retention supply voltage: 1.5 to 3.3 volt
- Byte data control: LB#s (DQ7–DQ0), UB#s (DQ15–DQ8)
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