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Am75DL9608HG Product Overview
Stacked Multi-Chip Package (MCP) Flash
Memory and Pseudo SRAM 64 Megabit (4 M x 16 Bit) and 32 Megabit (2 M x 16 Bit)
CMOS 3.0 Volt only, Simultaneous Operation Flash Memories, and 8 Mbit (512 K x 16-Bit) Pseudo Static RAM
General Description
The Am75DL9608HG consists of two flash memory devices (one 64-Mbit Am29DL640H
and one 32-Mbit Am29DL320G), and one 8 Mbit pseudo SRAM device.
Am29DL640H and Am29DL320G Features
Am29DL640H is a 64 megabit, 3.0 volt-only flash memory device, organized as 4,194,304 words. The Am29DL320G is a 32 megabit, 3.0 volt-only flash memory device, organized
as 2,097,152 words. Word mode data appears on DQ15–DQ0. The device is designed to be programmed in-system with the standard 3.0 volt VCC supply, and can also
be programmed in standard EPROM programmers.
The device is available with an access time of 70 or 85 ns and is offered in a
73-ball FBGA package. Standard control pins—chip enable (CE#fx), write enable
(WE#), and output enable (OE#)—control normal read and write operations,
and avoid bus contention issues.
The device requires only a single 3.0 volt power supply for both read and write
functions. Internally generated and regulated voltages are provided for the program
and erase operations.
Distinctive Characteristics
MCP
Features
- Power supply voltage of 2.7 to 3.3 volt
- High performance
- Flash access time as fast as 70 ns
- Pseudo SRAM access time as fast as 55 ns
- Package
- Operating Temperature
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Flash Memory Features
(Am29DL640H/Am29DL320G)
Features apply to Am29DL640H and Am29DL320G independently.
Architectural Advantages
- Simultaneous Read/Write operations
- Data can be continuously read from one bank while executing erase/program
functions in another bank.
- Zero latency between read and write operations
- Flexible Bank™ architecture
- Read may occur in any of the three banks not being written or erased.
- Four banks may be grouped by customer to achieve desired bank divisions.
- Manufactured on 0.17 µm process technology (Am29DL320G), 0.13
µm process technology (Am29DL640H)
- SecSi™ (Secured Silicon) Sector:
- Extra 256 byte sector on Am29DL640H
- Extra 256 byte sector on Am29DL320G
- Factory locked and identifiable: 16 bytes available for
secure, random factory Electronic Serial Number; verifiable as factory
locked through autoselect function. ExpressFlash option allows entire
sector to be available for factory-secured data
- Customer lockable: Sector is one-time programmable. Once
sector is locked, data cannot be changed.
- Zero Power Operation
- Sophisticated power management circuits reduce power consumed during
inactive periods to nearly zero.
- Boot sectors
- Top and bottom boot sectors in Am29DL640H
- Top or bottom boot options in Am29DL320G
- Compatible with JEDEC standards
- Pinout and software compatible with single-power-supply flash standard
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Performance Characteristics
- High performance
- Access time as fast as 70 ns
- Program time: 4 µs/word typical utilizing Accelerate function
- Ultra low power consumption (typical values)
- 2 mA active read current at 1 MHz
- 10 mA active read current at 5 MHz
- 200 nA in standby or automatic sleep mode
- Minimum 1 million erase cycles guaranteed per sector
- 20 year data retention at 125°C
- Reliable operation for the life of the system
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Software Features
- Supports Common Flash Memory Interface (CFI)
- Program/Erase Suspend/Erase Resume
- Suspends program/erase operations to allow programming/erasing in
same bank
- Data# Polling and Toggle Bits
- Provides a software method of detecting the status of program or
erase cycles
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Hardware Features
- Any combination of sectors can be erased
- Ready/Busy# output (RY/BY#)
- Hardware method for detecting program or erase cycle completion
- Hardware reset pin (RESET#)
- Hardware method of resetting the internal state machine to the read
mode
- WP#/ACC input pin
- Write protect (WP#) protects sectors 0, 1, 140, and 141 in Am29DL640H,
and two outermost boot sectors in Am29DL320G
- Acceleration (ACC) function accelerates program timing
- Sector protection
- Hardware method of locking a sector, either in-system or using programming
equipment, to prevent any program or erase operation within that sector
- Temporary Sector Unprotect allows changing data in protected sectors
in-system
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Pseudo SRAM Features
- Power dissipation
- Operating: 30 mA maximum
- Standby: 60 µA maximum
- CE1s# and CE2s Chip Select
- Power down features using CE1s# and CE2s
- Data retention supply voltage: 2.7 to 3.3 volt
- Byte data control: LB#s (DQ7–DQ0), UB#s (DQ15–DQ8)
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