Stacked Multi-chip Package (MCP) 32 Mbit (4 M x 8 bit/2 M x 16-bit) Flash Memory and
4 Mbit (512K x 8-Bit/256 K x 16-Bit) Static RAM

General Description
Am29LV320MT Features
The Am29LV320MT/B is a 32 Mbit, 3.0 volt single power supply flash memory device organized as 2,097,152 words or 4,194,304 bytes. The device has an 8/16-bit bus and can be programmed either in the host system or in standard EPROM programmers. Word mode data appears on DQ15–DQ0. The device is designed to be programmed in-system with the standard 3.0 volt VCC supply, and can also be programmed in standard EPROM programmers.

Distinctive Characteristics

MCP Features

• Power supply voltage of 2.7 to 3.3 volt
• High performance
• Access time as fast as 100ns initial 30 ns page Flash
  70 ns SRAM
• Package
  • 69-Ball FBGA
  • 8 x 10 x 1.2 mm
• Operating Temperature
• –40°C to +85°C

Architectural Advantages

• Single power supply operation
  • 3 V for read, erase, and program operations
• Manufactured on 0.23 µm MirrorBit process
  technology
• SecSi. (Secured Silicon) Sector region
  • 128-word/256-byte sector for permanent, secure
    identification through an 8-word/16-byte random
    Electronic Serial Number, accessible through a
    command sequence
  • May be programmed and locked at the factory or by
    the customer
• Flexible sector architecture
  • Sixty-three 32 Kword/64-kbyte sectors
  • Eight 4 Kword/8-kbyte boot sectors
• Compatibility with JEDEC standards
  • Provides pinout and software compatibility for
    single-power supply flash, and superior inadvertent
    write protection
• Minimum 100,000 erase cycle guarantee per sector
• 20-year data retention at 125°C
  

Performance Characteristics

• High performance
  • 100 ns access time
  • 30 ns page read times
  • 0.5 s typical sector erase time
  • 15 µs typical write buffer word programming time:
    16-word/32-byte write buffer reduces overall
    programming time for multiple-word updates
  • 4-word/8-byte page read buffer
  • 16-word/32-byte write buffer
• Low power consumption (typical values at 3.0 V, 5
  MHz)
  • 30 mA typical initial Page read current; 10 mA typical
    intra-Page read current
  • 50 mA typical erase/program current
  • 1 µA typical standby mode current
    

Software Features

• Program Suspend & Resume: read other sectors
  before programming operation is completed
• Erase Suspend & Resume: read/program other
  sectors before an erase operation is completed
• Data# polling & toggle bits provide status
• Unlock Bypass Program command reduces overall
  multiple-word programming time
• CFI (Common Flash Interface) compliant: allows host
  system to identify and accommodate multiple flash
  devices
  

Hardware Features

• Sector Group Protection: hardware-level method of
  preventing write operations within a sector group
• Temporary Sector Unprotect: VID-level method of
  changing code in locked sectors
• WP#/ACC input:
  Write Protect input (WP#) protects top or bottom two
  sectors regardless of sector protection settings
  ACC (high voltage) accelerates programming time for
  higher throughput during system production
• Hardware reset input (RESET#) resets device
  

SRAM Features

• Power dissipation
  • Operating: 30 mA maximum
  • Standby: 10 µA maximum
• CE1s# and CE2s Chip Select
• Power down features using CE1s# and CE2s
• Data retention supply voltage: 1.5 to 3.3 volt
• Byte data control: LB#s (DQ7–DQ0),
  UB#s (DQ15–DQ8)