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Advanced (Burst/Page+Simult. R/W)
Am29BDS family (1.8V)
BDS323D (32Mb, x16)
Datasheet

Am29BDS323D Product Overview

32 Megabit (2 M x 16-Bit),
CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory

General Description
The Am29BDS323 is a 32 Mbit, 1.8 Volt-only, simultaneous Read/Write, Burst mode Flash Memory device. This device uses a single VCC of 1.7 to 1.9V to read, program, and erase the memory array. A 12.0 Volt VPP may be used for faster program performance if desired. The device can also be programmed in standard EPROM programmers. The Am29BDS323 provides a burst access of 20 ns at 30 pF with initial access times of 120 ns at 30 pF. The device operates within the industrial temperature range of –40°C to +85°C. The device is offered in the 47-ball FBGA package.

Distinctive Characteristics

Architectural Advantages Package Options Performance Characteristics Software Features Hardware Features


Architectural Advantages

  • Single 1.8 Volt read, program and erase (1.7 to 1.9 Volt)
  • Multiplexed Data and Address for reduced I/O count
    • A0–A15 multiplexed as D0–D15
    • Addresses are latched with AVD# control inputs while CE# low
  • Simultaneous Read/Write operations
    • Data can be continuously read from one bank while executing erase/program functions in other bank
    • Zero latency between read and write operations
  • Burst length
    • Continuous linear burst
  • Sector Architecture
    • Eight 4 Kword sectors and sixty-three sectors of 32 Kwords each
    • Bank A contains the eight 4 Kword sectors and fifteen 32 Kword sectors
    • Bank B contains forty-eight 32 Kword sectors
  • Software command set compatible with JEDEC 42.4 standards
    • Backwards compatible with Am29F and Am29LV families
  • CMOS compatible inputs, CMOS compatible outputs
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Package Options
  • 47-ball FBGA
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Performance Characteristics

  • Read access times at 40 MHz
    • Burst access times of 20 ns @ 30 pF at industrial temperature range
    • Asynchronous random access times of 90 ns @ 30 pF
    • Synchronous random access times of 120 ns @ 30 Pf
  • Power dissipation (typical values, 8 bits switching, CL = 30 pF)
    • Burst mode read: 25 mA
    • Simultaneous Operation: 40 mA
    • Program/Erase: 15 mA
    • Standby mode: 0.2 µA
  • Minimum 1 million write cycles guaranteed per sector
  • 20 year data retention at 125°C
    • Reliable operation for the life of the system
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Software Features

  • Erase Suspend/Resume
    • Suspends an erase operation to read data from, or program data to, a sector that is not being erased, then resumes the erase operation
  • Data# Polling and Toggle Bits
    • Provides a software method of detecting program and erase operation completion
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Hardware Features

  • Hardware reset pin (RESET#)
    • Hardware method to reset the device for reading array data
  • Sector protection
    • Software command sector locking
    • WP# protects the last two boot sectors
    • All sectors locked when VPP = VIL
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