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MirrorBit™
S29AL016M
Datasheet
Product Overview

S29AL016M Product Overview
16 Megabit (2 M x 8-Bit/1 M x 16-Bit) 3.0 Volt-only Boot Sector Flash Memory featuring MirrorBit™ Technology

General Description
The S29AL016M is a 16 Mbit, 3.0 Volt-only Flash memory organized as 2,097,152 bytes or 1,048,576 words. The device is offered in a 48-ball Fine-pitch BGA, 64-ball Fortified BGA, and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. The device requires only a single 3.0 volt power supply for both read and write functions, designed to be programmed in-system with the standard system 3.0 volt VCC supply. The device can also be programmed in standard EPROM programmers.

Distinctive Characteristics

Architectural Advantages Performance Characteristics Software Features Hardware Features

Architectural Advantages

  • Single power supply operation
    • 3 volt read, erase, and program operations
  • Manufactured on 0.23 um MirrorBit process technology
  • SecSi™ (Secured Silicon) Sector region
    • 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence
    • May be programmed and locked at the factory or by the customer
  • Flexible sector architecture
    • One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and thirty-one 64 Kbyte sectors (byte mode)
    • One 8 Kword, two 4 Kword, one 16 Kword, and thirty-one 32 Kword sectors (word mode)
  • Compatibility with JEDEC standards
    • Provides pinout and software compatibility for singlepower supply flash, and superior inadvertent write protection
  • Top or bottom boot block configurations available
  • 100,000 erase cycle per sector typical
  • 20-year data retention typical

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Performance Characteristics

  • High perforrmance
    • 90 ns access time
    • 0.7 s typical sector erase time
  • Low power consumption (typical values at 5 MHz)
    • 400 nA standby mode current
    • 15 mA read current
    • 40 mA program/erase current
    • 400 nA Automatic Sleep mode current
  • Package options
    • 48-ball Fine-pitch BGA
    • 64-ball Fortified BGA
    • 48-pin TSOP

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Software Features
  • Program Suspend & Resume: read other sectors before programming operation is completed
  • Erase Suspend & Resume: read/program other sectors before an erase operation is completed
  • Data# polling & toggle bits provide status
  • Unlock Bypass Program command reduces overall multiple-word programming time
  • CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices
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Hardware Features
  • Sector Protection: hardware-level method of preventing write operations within a sector
  • Temporary Sector Unprotect: VID-level method of changing code in locked sectors
  • Hardware reset input (RESET#) resets device
  • Ready/Busy# output (RY/BY#) indicates program or erase cycle completion
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