AMD Introduces Advanced Flash Memory Devices for Cellular Phones
--Industry leading performance and density at 1.8 volts--
SUNNYVALE, CA --
AMD today announced its most advanced Flash memory products, the 32 Megabit Am29BDS323 and the 64 Megabit Am29BDS643. These sophisticated devices combine AMD's leading Simultaneous Read/Write architecture with high performance Burst mode interfaces and Super Low Voltage technology. Operating at speeds from 40MHz to 54Mhz, these products are ideal for next-generation cellular phone applications that include innovations such as Internet connectivity, PDA functionality, video streaming and MP3 capability.
"To introduce the most advanced solutions for its high-end phones, Nokia works closely with many suppliers in its product development," said Rune Lindholm, Nokia's Principal Scientist of Baseband Architectures. "AMD is the first supplier to meet Nokia's Flash memory requirements to address the high data rates of next generation cellular phones such as GPRS, EDGE and 3G. AMD's exceptionally fast 32 Megabit and 64 Megabit products enable us to provide the most advanced cellular solutions in the market."
"We are proud to support Nokia, the world's leading cellular phone manufacturer, in its efforts to revolutionize wireless communications," said Walid Maghribi, group vice president of AMD's Memory Group. "AMD challenged itself and succeeded through its partnership with Nokia to develop and ship the most advanced flash memory products available in the market today."
The Am29BDS643 has an industry leading burst access time of 13.5ns and the Am29BDS323 has a burst access time of 20ns. The high speed Burst mode capability allows microprocessors to operate at optimal performance levels by significantly reducing the number of wait states required to read code and data from the flash. The result is increased overall system performance.
In order to effectively support Nokia's stringent printed circuit board topography, AMD has packaged these products in a newly developed 0.5 mm Fine pitch Ball Grid Array (FBGA) and multiplexed the address and data pins to minimize the input/output pin count. The reduced pin configuration combined with AMD's state-of-the-art packaging technology allows for easier board routing and helps to conserve board space.
The Am29BDS323 and the Am29BDS643 are able to continuously read data from one memory bank while executing erase/program functions in another bank through AMD's award winning Simultaneous Read/Write technology. The Am29BDS323 has two independent memory banks of 8 Megabits and 24 Megabits, while the Am29BDS643 is partitioned into two banks of 16 Megabits and 48 Megabits. As a result, system designers can combine the functionality of several memory devices into one, resulting in reduced component costs.
These innovative features are combined with AMD's Super Low Voltage technology which provides single 1.8 volt read, program, and erase capability. AMD was the first to offer 1.8 volt flash memory devices, enabled by AMD's patented negative gate erase architecture. Like all of AMD's low voltage Flash memory devices, the Am29BDS323 and Am29BDS643 offer Zero Power Operation, where they automatically enter "sleep mode" when not in use and consume only 0.2uA of current.
About AMD Flash Memory Devices
AMD is a leader in flash memory products with devices that encompass a broad spectrum of densities and features to support a wide range of markets. AMD has many innovative products such as the award winning Simultaneous Read Write (SRW) product family, Super Low Voltage 1.8V flash memory devices, and Burst and Page mode devices. AMD developed the robust Known Good Die (KGD) program, and the patented negative gate erase technique, and refined the industry standard Fine pitch Ball Grid Array (FBGA).
All of AMD's flash memory products are guaranteed for a minimum of one million write cycles per sector and 20 years data retention, making them the most reliable non-volatile memory devices offered in the industry.